Micron announced its UFS 4.0 mobile storage solution and revealed that it has already shipped qualification samples to “select global smartphone manufacturers and chipset vendors”.
The new tech will be used to manufacture storage in 256GB, 512GB and 1TB capacities. High-volume production will begin in the second half of this year, so it will be a while before the first phones with Micron UFS 4.0 storage arrive.
This storage is built on 232-layer TLC flash (triple-level cells, i.e. storing 3 bits per cell). According to the company, its six-plane NAND architecture enables higher random read throughput. Compared to previous generation storage write bandwidth is 100% higher, read bandwidth is 75% higher.
In more concrete numbers, Micron’s UFS 4.0 storage offers up to 4,300Mbps sequential read speeds and up to 4,000Mbps sequential write speeds. That’s higher than Samsung’s UFS 4.0, especially the write rating.
Additionally, the new UFS 4.0 chips are 25% more power efficient and promise 10% lower write latency.
Are you ready for the next big thing in #mobile storage? Introducing Micron UFS 4.0 storage, purpose-built for flagship smartphones. Built on advanced 232-layer 3D NAND, it delivers best-in-class performance and power in capacities up to 1TB. https://t.co/PWqS252Ccc pic.twitter.com/lnAXWFlwOW
— Micron Technology (@MicronTech) June 21, 2023
from GSMArena.com - Latest articles https://ift.tt/5TARXtF
via IFTTT
Bagikan Berita Ini
0 Response to "Micron unveils its UFS 4.0 storage tech it's twice as fast as previous-gen storage"
Post a Comment